Abstract
Rare-earth ion-doped potassium yttrium double tungstate, RE:KY(WO4)2, is a promising candidate for small, power-efficient, on-chip lasers and amplifiers. Thin KY(WO4)2-on-glass layers with thicknesses ranging between 0.9 and 1.6 μm are required to realize on-chip lasers based on high refractive index contrast waveguides operating between 1.55 and 3.00 µm. The crystalline nature of KY(WO4)2 makes the growth of thin, defect-free layers on amorphous glass substrates impossible. Heterogeneous integration is one of the promising approaches to achieve thin KY(WO4)2-on-glass layers. In this process, crystal samples, with a thickness of 1 mm, are bonded onto a glass substrate and thinned down with an extensive lapping and polishing procedure to the desired final thickness. In this study, a lapping and polishing process for KY(WO4)2 was developed toward the realization of integrated active optical devices in this material.
Highlights
Potassium double tungstate (i.e., KY(WO4)2, KGd(WO4)2, and KLu(WO4)2) was used for decades as an active material for Raman lasers [1,2,3] and, when doped with rare-earth ions, for high-power ultra-short pulsed lasers [4,5] and thin disk lasers [6,7]
We present the development of a lapping and polishing process made on thick (>300 μm) KY(WO4)2 layers
A lapping process was developed on thick KY(WO4)2 samples (>300 μm)
Summary
Potassium double tungstate (i.e., KY(WO4), KGd(WO4), and KLu(WO4)2) was used for decades as an active material for Raman lasers [1,2,3] and, when doped with rare-earth ions, for high-power ultra-short pulsed lasers [4,5] and thin disk lasers [6,7]. The crystal provides high emission and absorption cross-section for rare-earth ions doped in it [11] These properties, in combination with its relatively high refractive index (n ≈ 2 at 1550 nm [12]), make KY(WO4) an interesting material for the realization of small, high-contrast, low-threshold, power-efficient on-chip lasers and amplifiers. Three KY(WO4) assemblies are mounted on the ultra-parallel plate in a triangular configuration (Figure 3) This configuration provides a higher degree of stability for the samples on the lapping and polishing disks during the process, compared to a single mounted assembly. The procedure was repeated when the assemblies deviated more than ±0.4 μm from each other
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