Abstract
Abstract Lanthanum doped lead zirconate titanate stannate antiferroelectric thin films with `square' hysteresis loops and zero remanent polarization were prepared, for the first time, from acetic acid-based sol–gel processing. The method has the advantages of simple procedure in solution preparation, less sensitivity to moisture and the potential to make thick films. The thin films obtained have very distinctive phase transition field, and the saturated polarization value of 37 μ C/cm 2 , which are suitable for high-energy-storage or decoupling capacitor applications in advanced multichip modules, as well as microactuation applications.
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