Abstract
A Langevin model simulation of channeling trajectories has been developed. This uses numerical solution of the equation of motion in a continuum potential together with a randomly fluctuating force derived from the diffusion coefficient of the diffusion model of dechanneling. This permits ready comparison with the transverse energy-based approach of the continuum model while being less computationally expensive than a full Monte Carlo simulation. Examples of the application of the model to dechanneling of protons in silicon, and to the charge exchange cooling and heating of heavy ions in silicon are given.
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