Abstract
We have fabricated and characterized a Landau level spin diode in a GaAs two-dimensional hole system. We used the spin diode to probe the hyperfine coupling between hole and nuclear spins and found no detectable net nuclear spin polarization, indicating that hole–nuclear spin flip-flop processes are suppressed by at least factor of 50 compared to GaAs electron systems.
Highlights
We have fabricated and characterized the Landau level spin diode in GaAs two dimensional hole system
Studying the coupling between spins of charge carriers and nuclear spins is a rapidly expanding field due to possible applications for quantum information processing [1]. This coupling is a major source of electron spin decoherence in GaAs spin qubits, because both Ga and As have nonzero nuclear spins
2μ0 3 γe γn term describes a process where the electron spin changes its orientation, and the nuclear spin simultaneously changes its orientation in the opposite direction
Summary
We have fabricated and characterized the Landau level spin diode in GaAs two dimensional hole system. In this work we use Landau level diode technique to probe coupling of nuclear and hole spins in a GaAs two dimensional (2D) hole system in the quantum Hall regime at filling factor ν = 2.
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