Landé g factors in elongated InAs/GaAs self-assembled quantum dots

Abstract

We report on a theoretical study of Landé g factors of electrons and holes in InAs/GaAs self-assembled quantum dots. We find that the g factor of holes in quantum dots can be easily tuned by changing the aspect ratio of the structures while the g factor of electrons exhibits relatively weak dependence on the geometry. The dependence of the g factor of holes on the elongation is attributed to the fact that the proportion of heavy- and light-hole components in the ground state of holes is sensitive to the geometry of the quantum dots.