Abstract
The electrical characteristics of SiC Schottky barrier diodes with laminated Mo/C electrodes having a Mo and C atom composition ratio of 2:1 have been investigated. High thermal stability against annealing up to a temperature of 1050 °C has been found as a diode characteristic. The almost identical values of Schottky barrier height for the electrons ( $\varPhi _{\mathrm {\mathbf {Bn}}})$ obtained in several measurements with the ideality factors of below 1.10 indicate the formation of an ideal Schottky contact with 4H-SiC substrates.
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