Abstract
Quantum-dot light-emitting-diodes (QLEDs) can be fabricated by low-cost solution processes, such as spin-coating or inkjet printing, making them strong rivals to their organic LED counterparts. However, the top electrodes, which are usually based on metallic thin-films, such as Al or Ag, have to be deposited by a costly vacuum process, which is incompatible with the low-cost solution process. In this work, an InSnBi alloy, which has a low-melting-point of 47 °C, is developed as a laminated top cathode for the QLEDs. Because of the presence of the native oxides that serve as an electron blocking layer, the resultant vacuum-free fabricated QLEDs exhibit an improved performance, with a peak external quantum efficiency of 12.3%, 9.15%, and 2.5% for red, green, and blue devices, respectively, which is 1.5-, 1-, and 1.1-fold higher than that of QLEDs with evaporated Al cathodes. The elimination of the costly vacuum process allows rapid high throughput, and low-cost fabrication of QLEDs for material screening purpose.
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