Lamellar devices processed by thermomigration

Abstract

Lamellar structures consisting of alternate p- and n-type silicon layers were fabricated by migrating molten aluminum-rich wires through n-type silicon wafers in a thermal gradient. The recrystallized material deposited behind the molten wires was p type. An aluminum-dopant concentration profile was calculated which was consistent with the measured electrical characteristics of the lamellar structures. Lamellar devices made from these structures can be used as vertical multijunction solar cells, high-voltage diodes, surge protectors, and negative-incremental resistors.