LaInO3/BaSnO3 polar interface on MgO substrates

Youjung Kim,Kookrin Char,Juyeon Shin,Young Mo Kim

doi:10.1063/1.5046368

Abstract

We report on a new property of the LaInO3 (LIO)/(Ba,La)SnO3 (BLSO) polar interface using MgO substrates. The growth of well-formed LIO/BLSO interface structures on non-perovskite MgO substrates was confirmed by reciprocal space mapping image and transmission electron microscopy. Subsequently, we measured electrical properties as a function of the La doping rate of the BLSO layer and found that the LIO/BLSO polar interface shows conductance enhancement after the deposition of the polar LaInO3 layer on the BLSO layer, in agreement with our earlier results on SrTiO3 (STO) substrates. However, different electrical properties of the interfaces were found on MgO from those on STO substrates; we observed conductance enhancement even at the interface with undoped BaSnO3 (BSO) on the MgO substrates. We attribute such different behavior to the difference in the Fermi levels of BSO on MgO and STO substrates, either due to the larger donor density or the smaller acceptor density in BSO on MgO. Using such a nominally undoped interface, we fabricated the field effect transistors and presented their performances with Ion/Ioff ∼ 109.

Highlights

2-dimensional electron gas (2DEG) at the interface of perovskite heterostructures shows high charge carrier density,[5] which can enable high electron mobility transistors to be used in high power and high frequency devices
The exact mechanism of these 2DEGs has not yet been fully elucidated,9–12 2DEG in a perovskite structure can be used in various places, especially in combination with a material with a novel characteristic of the same perovskite structure
In the LaInO3 (LIO)/(Ba,La)SnO3 (BLSO) perovskite interface, a 2DEG-like behavior was observed; conductance enhancement by more than 104 was observed when LIO is deposited on a BLSO film, suggesting that a 2DEG-like layer has been created at the interface between BLSO and LIO.[15]

Summary

Introduction

Perovskite heterostructures have been attracting attention due to their interesting interfacial properties such as superconductivity and ferromagnetism.[1,2,3,4] In particular, 2-dimensional electron gas (2DEG) at the interface of perovskite heterostructures shows high charge carrier density,[5] which can enable high electron mobility transistors to be used in high power and high frequency devices.

Results

Conclusion