Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC

Abstract

The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L=5×1034 cm−2s−1 and collect ∼ 3000 fb−1 of data. The innermost layer of the pixel detector will be exposed to doses of about 1016 neq/ cm2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 μm to 320 μm in p-type and n-type substrates have been fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. The results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented.