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Abstract
The aim of this work was to investigate the potentiality of molecular beam epitaxy techniques to prepare high-κ LaAlO3 (LAO) films on silicon (001). First, the homoepitaxial growth of LAO was demonstrated for growth temperatures higher than 520 °C. Then, amorphous LAO films were prepared on p-type Si(001) substrates with no interfacial SiO2 formation. LAO layers directly grown on Si(001) appear to be single crystalline at growth temperatures higher than 600 °C but show interfacial reactions. Electrical measurements demonstrate that the growth temperature has a critical impact on 1eakage current. LAO films grown under atomic oxygen have a higher permittivity and a lower charge density than films grown under molecular oxygen.
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