Abstract
Effect of W and TiN/W gate metal on the interface quality of La2O3/InGaAs metal–oxide-semiconductor (MOS) interface is investigated. Hard X-ray photoelectron spectroscopy revealed that gate metal greatly affects the oxidation states at La2O3/InGaAs interface after post-metallization annealing (PMA). Results demonstrate that TiN/W gate metal can effectively control the reaction at La2O3/InGaAs interface and also suppress the formation of As, Ga, and In oxides. As a result, superior capacitance–voltage (C–V) characteristics with low interface state density (Dit) of 4.6×1011cm−2/eV (∼0.1eV from midgap) and leakage current below 10−5A/cm2 was obtained for TiN/W/La2O3 (10nm)/InGaAs MOS capacitors. The MOS structure integrity was preserved for annealing temperature up to 620°C.
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