Abstract
Resistive switching devices are promising candidates for the next generation nonvolatile memories due to their outstanding performance, simplicity, and scalability. Among them, developing multilevel resistive switching has attracted great attention for its potential in significantly improving information storage density but without extra energy consumption. Although continuous multilevel resistive switching (CMRS) has been observed in many metal oxides and organic materials, achieving random access multilevel nonvolatile memories (RAMNM) with high speed and reliability is still pressingly needed for practical applications. Here, we have successfully fabricated a RAMNM based on high–performance pulse-width modulated memristive ferroelectric tunnel junctions (FTJs) of Pt/La0.1Bi0.9FeO3/Nb:SrTiO3 with giant switching ratios above 4 × 105 at room temperature.
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