Abstract
Perovskite oxides are extremely interesting for their possible use in high-mobility thin-film transistors (TFTs) suitable for high-performance large-area circuits. Here we present a semianalytical model of a recently fabricated TFT based on ${\mathrm{La}\text{\ensuremath{-}}\mathrm{Ba}\mathrm{Sn}\mathrm{O}}_{3}$, and explore the possibilities for technology optimization and the intrinsic potential of the device concept for applications in transparent and flexible electronics. We show that ${\mathrm{La}\text{\ensuremath{-}}\mathrm{Ba}\mathrm{Sn}\mathrm{O}}_{3}$ TFTs can outperform existing TFT device technologies through a detailed benchmarking exercise, and that these devices can be promising for display electronics and for a broader range of applications.
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