Abstract

FePd, FePt, and CoPt alloy thin films are prepared on MgO(110) single-crystal substrates by using two different methods. One is one-step method consisting of deposition at an elevated substrate temperature of 600°C and the other is two-step method consisting of low-temperature deposition at 200°C followed by annealing at 600°C. The crystal structure, the crystallographic orientation, and the surface morphology are compared. L10 ordered FePd, FePt, and CoPt films epitaxially grow on the substrates with three variants, (110), (101), and (011), when deposited at 600°C. The c-axis of L10(110) variant is lying in the film plane, whereas those of L10(101) and L10(011) variants are 45° canted from the substrate surface. Disordered FePd, FePt, and CoPt single-crystal films of (110) orientation are formed by deposition at 200°C. An A1-L10 phase transformation occurs along A1[001], A1[010], and A1[001] by annealing the disordered films at 600°C. The annealed films thus consist of three L10 variants. Similar final crystal structure and orientation are realized in the FePd, the FePt, and the CoPt films prepared by employing the two different methods. The L10 ordered films prepared by one-step method have island-like surfaces involving facets, whereas those prepared by two-step method have very flat surfaces with the arithmetical mean roughness lower than 0.3 nm. The two-step method is useful for preparation of L10 ordered films with flat surfaces.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.