Ku‐band GaN 100‐W internally matched amplifier using accurate large signal model

Abstract

AbstractThis paper describes a Ku‐band 100‐W gallium nitride (GaN) internally matched power amplifier using an accurate large signal Angelov model. The large gate‐periphery GaN devices on SiC substrate are used for achieving the large power output and high efficiency. For designing exactly the power amplifier, the large signal GaN model is founded using measured pulse I‐V and S parameters of different bias conditions. The foundation impedance and harmonic impedance are matched simultaneously in the matching circuit based on the large signal model. The power amplifier efficiency is promoted, and the input and output matching circuit with the GaN chips are integrated in a 13 × 21 mm ceramic package. Using two 12 mm GaN transistors, the amplifier finally has the pulse output power of over 100 W and the linear gain of 8 dB across the band of 13 to 15 GHz, the efficiency is over 40% under the pulse drain bias voltage (Vds) of 32 V, and the duty is 10% with the pulse width of 100 microseconds. The results show that the character of realized amplifier is consistent with the simulation data information, which fully indicates the veracity of the developed model. And this is the first paper proposed of a 100 W power amplifier achieved in such a small package in Ku band.