Abstract
The incorporation of Kr in sputtered a-Si films has been investigated in a systematic way by varying the Kr to Si flux, yielding Kr concentrations up to 5 at%. Compositions were determined with X-ray microanalysis. A model has been applied to describe the composition of the growing film. The layers were characterized by positron annihilation, Raman spectroscopy and Mossbauer spectroscopy. The present results clearly indicate that ion assisted growth leads to a strong reduction of open volume defects, and that the Kr resides in very small clusters.
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