Abstract

Kondo semiconductor ${\text{YbB}}_{12}$ and the Lu-substituted ${\text{Yb}}_{1\ensuremath{-}x}{\text{Lu}}_{x}{\text{B}}_{12}$ $(x=1/8)$ alloy have been studied by the bulk-sensitive hard x-ray $(h\ensuremath{\nu}\ensuremath{\sim}8\text{ }\text{keV})$ photoelectron spectroscopy at temperatures from 200 down to 20 K. To check the Kondo lattice effects for the bulk electronic states, the temperature dependence of the bulk Yb valence and $4f$ peak positions in both systems is analyzed with use of the single-impurity Anderson model (SIAM) by considering the crystalline electric field effects. For $x=0$, the temperature dependence of the bulk electronic states cannot be interpreted within the SIAM, whereas those for $x=1/8$ could be understood by the SIAM predictions due to the collapse of the lattice coherence by the Lu substitution. These results indicate that the Kondo lattice effects are important for pure ${\text{YbB}}_{12}$ and play essential roles for forming a narrow gap at low temperatures.

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