Kondo lattice behaviour in CePt 2(Si 1− xSn x) 2 alloys

Abstract

Measurements of electrical resistivity are presented for polycrystalline alloys in the CePt 2(Si 1− x Sn x ) 2 system. Results of X-ray diffraction indicate that the tetragonal region of the CePt 2(Si 1− x Sn x ) 2 alloy system that is amenable for study only extends up to x=0.3. The resistivity maximum characteristic of a Kondo lattice is observed at a temperature T max=63 K for the parent compound CePt 2Si 2 and shifts to lower temperatures with increase in Sn content. The compressible Kondo lattice model is applied to describe the results of T max in terms of the on-site Kondo exchange interaction J and the electron density of states at the Fermi level N( E F). A value of | JN( E F)|=0.060±0.009 for the parent compound is obtained from the experimental results.