Klein Tunneling through Triple Barrier in AB Bilayer Graphene

Abstract

AbstractThe transport properties of charge carriers in AB bilayer graphene through a triple electrostatic barrier are investigated. The transmission and reflection using the boundary conditions together with the transfer matrix method are calculated. For energy less than the interlayer coupling γ1, it is shown that, at normal incidence, transmission is completely suppressed in the gap for a large barrier width while it appears in the gap for the opposite case. For energy greater than γ1, it is shown that in the absence of an interlayer potential difference, transmission is less than that of a single barrier, but in its presence, transmission in the gap region is suppressed, as opposed to a double barrier. It is found that one, two, or three gaps can be created depending on the number of interlayer potential differences applied. Resonance in the transmission channel is observed that is not seen in the single and double barrier cases. Finally, the conductance is computed and it is shown that the number of peaks is greater than the double and single barrier cases. The results here enable the development of graphene‐based transistors.