Abstract
The thermal fluctuation of the kinks formed at the monoatomic step edges on the Si(111) 7×7 surface was studied by high-temperature scanning tunneling microscopy. The temperature dependence of the mean square displacements of kink positions indicates that the displacements are a thermal activation process with an apparent activation energy of 1.17±0.1 eV. Although the direct-current induces surface adatom migration along the current direction, a kink fluctuation anisotropy due to the Ehrlich–Schwöbel barrier of the adatom drift across the step was not observed.
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