Abstract
Abstract The method of synchronization of nucleation (SN) by means of periodically altering the substrate temperature has been studied by using a simple Monte Carlo simulation model. The growth simulations were performed on a Si(100)-type geometry. Both an ideal sawtooth-shaped substrate temperature function and a realistic temperature function, which is valid for an indirectly heated substrate, were applied. The results from the simulations with the realistic temperature modulation correspond qualitatively to previously reported experimental data for homoepitaxial growth of Si on Si(111) and Ge on Ge(111) using SN. We predict that correctly applied SN should also improve the 2D character of Si on Si(100) epitaxy. Finally, experimental results on SN applied to heteroepitaxial growth of Si 1 − x Ge x are presented.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
