Abstract
The potential step method and scanning electron microscopy were used to investigate zinc deposition on zinc single crystals in high purity . Kinetics and morphology are dependent on crystal orientation. Below 20 mV layer type deposits are formed on the basal (0001) plane. Above 20 mV there is nucleation and growth of three dimensional centers. On the plane perpendicular to the basal plane (1120) only layer type growth was observed.
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