Abstract
TiN films were deposited by chemical vapor deposition (CVD) using NH3 and TiCl4 as the source precursors. The effect of partial pressures of TiCl4 (PTiCl4 ) and NH3 (PNH3 ) on the growth rate and step coverage quality of these TiN films was measured, revealing the growth rate of TiN films followed the Langmuir–Hinshelwood (L–H) type isotherm as a function of PTiCl4 . The sticking probability of film-forming species was estimated from the step coverage profile simulated by using the Monte Carlo method. The relationship between the sticking probability of Ti-containing species and PNH3 was investigated, revealing that the sticking probability in the 1st-order kinetic regime depended on PNH3 . The effect of NH3 on the growth kinetics could be expressed by G.R.×ρTiN=[ksKCTiCl4 /(1+KCTiCl4 )]·(CNH3 )2 in the wide range of PTiCl4 . The reason for 2nd-order reaction for PNH3 is not clear yet, but the rate equation suggests the complicated gas-phase and/or surface reaction chemistries to form TiN.
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