Abstract
We have investigated the time and intensity dependence of the creation process for light-induced metastable defects (Staebler–Wronski effect) in hydrogenated amorphous silicon (a-Si:H). The observed changes in electron spin resonance spin density (dangling bonds) and photoconductivity are consistent with a model which explains the Staebler–Wronski effect as a self-limiting process intrinsic to a-Si:H. A possible microscopic mechanism based on the nonradiative recombination of band tail carriers is discussed.
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