Abstract
Abstract The solid state reaction of CuWO4-x formation from CuO and WO3 was studied by the contact method in air and nitrogen. The results showed that the reaction is governed by the diffusion of the W6+ and O2- ions and that the rate determining step is the diffusion of oxygen ions in the reaction product. This is in agreement with the defect structure of copper tungstate, an n-type semiconductor with oxygen vacancies through which the diffusion process is possible.
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