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Abstract
The kinetics of the reaction of silyl radicals (SiH3) with H2O2 and O2 were studied using time-resolved infrared diode laser absorption spectroscopy. The rate constant SiH3 + H2O2 at 298 K was determined to be 9.8 × 10-12 cm3 molecule-1 s-1. This rate constant is independent of temperature over the range 298−573 K. The yield of OH products was quantified by reaction with CO to produce CO2, which was detected by infrared spectroscopy. The branching ratio of the SiH3 + H2O2 reaction into OH product channels was estimated to be <0.05 at 298 K. Similar experiments on the SiH3 + O2 reaction indicated an OH product branching ratio of 0.076 ± 0.04 at 298 K.
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