Abstract
Theories of the growth of anodic oxide films are discussed and their predictions concerning the current and temperature-dependence of the field examined. New measurements of the mean field in (amorphous) Ta/sub 2/O/sub 5/ are used to test the predictions of the theories of oxide growth. Results obtained in 0.1 N H/sub 2/SO/sub 4/ and 100% H/sub 2/SO/sub 4/ as the form ing electrolyte are consistent with both the single carriersingle barrier theories and the theory in which a compensating space charge for the moving metal ions is provided by immobile cation vacancies. Formations in 40% H/sub 2/SO/sub 4/ over a wider temperature range (150 deg C) showed, however, significant departure from the predictions of the above theories. Instead they agree with Dewald's theory in which the rate of movement of metal ions is controlled by activation barriers located both at the metal-oxide interface and within the film. (auth)
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