Abstract
The kinetics of tertiarybutylphosphine adsorption and phosphorus desorption from indium phosphide ( 0 0 1 ) have been determined using reflectance difference spectroscopy for real-time monitoring of the phosphorus coverage. The precursor adsorption rate depends linearly on the coverage, and the initial sticking coefficient varies from 0.007 to 0.001 as the temperature increases from 420 to 520 °C. The phosphorus desorption rate is first order in the coverage and exhibits an activation energy and pre-exponential factor of 2.4 ± 0.2 eV and 10 14.7 ± 1.5 s −1. These reaction kinetics play an important role in the growth of phosphide-based alloys by metalorganic vapor-phase epitaxy.
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