Abstract
The kinetics of Si and S segregation to the (100) surface in Fe-6at%Si single crystals has been measured by Auger electron spectroscopy for the temperature range from 770 to 900 K. A rather unexpected behaviour for sulfur was found which was not controlled by bulk diffusion. Sulfur segregation kinetics can be explained by taking into account both sulfide formation as well as pipe diffusion. At higher sulfur surface coverage the reaction rate drops. The latter may be a consequence of a surface phase transition. Moreover, the model is extended to such cases where the history of the sample should also be considered. Thus, the experiments of the segregation sequence can be described.
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