Abstract
The kinetics of strain relaxation through misfit dislocation formation is investigated in InAs/GaAs(111)A layer-by-layer heteroepitaxy. Experimental measurements are presented of strain relaxation as a function of InAs film thickness for epitaxial film growth on thin and thick GaAs buffer layers. The experimental measurements are described successfully through a phenomenological mean-field theoretical analysis. The analysis reveals that the mechanical behavior of our heteroepitaxial system with a thin buffer layer is similar to that of a system with a thin compliant substrate that is practically unconstrained at its base.
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