Abstract
The time evolution of current in p-Ge doped with shallow acceptors was studied. The dependences of impact ionization and recombination times on electric field and uniaxial pressure were found. The role of Poole-Frenkel ionization of shallow acceptors was analyzed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
