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Abstract
The observation that adsorption of hydrogen and isobutene on ZnO greatiy increases the gamma -induced conductivity was explained qualitatively in terms of trapping of radioinduced holes at adsorbed hydrogen or isobutene molecules leaving the electrons to increase the conductivity. A simple quantitative treatment of the kinetics of this process is made and compared with the experimental data. The results support the proposed mechanism based on competition for holes between adsorbed molecules and electrons. (J.S.R.)
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