Abstract
A model is proposed for the radial growth of III-V nanowires (NWs) in vapor phase epitaxy on masked substrates, which provides explicitly the NW radius as a function of its length. Analytical solutions are obtained for the NW radius in different stages of growth. A comparison of the model with the data on the growth kinetics of GaAs NWs is presented and a good correlation with the data is demonstrated. Keywords: III-V nanowires, radial growth, vapor phase epitaxy, modeling.
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