Abstract
Kinetics of photon-stimulated-desorption (PSD) of positive ions from a Si surface treated with a hydrofluoric acid (HF) solution has been investigated using synchroton radiation (SR) in the vacuum-ultraviolet (VUV) region. Mass analysis of the PSD ions is performed with a time-of-flight technique. PSD of H + and O + ions is observed during exposure of the surface to VUV-SR. It is found that the O + ion desorption rate initially rises and subsequently decreases as the amount of photon exposure is increased, while the H + ion desorption rate decreases exponentially with photon exposure. The photon-exposure dependence of the O + desorption rate is interpreted in terms of a two-step first-order process in which OH bond scission in a surface SiOH complex initially occurs to give rise to desorption of H + and then the remaining Si-O bond is ruptured to produce O + PSD ions. The H + PSD reaction is found to be a single-step process.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
