Abstract
The theoretical models described in Part I of this series (Thermochim. Acta., 131 (1988) 211) were used to determine the crystallization kinetics of amorphous CdGeAs2. Implementation of correction techniques were found to be essential to reduce the data to the properties of isolated material and eliminate errors introduced by the DSC device itself. These corrections are discussed in detail for both the Perkin Elmer DSC7 (Perkin Elmer Corporation, Norwalk, CT, U.S.A.) and the DuPont 1090 DSC (E.I. DuPont de Nemours Inc., Wilmington, DE, U.S.A.), and the calculated kinetic parameters are compared for the two devices. The effect of the use of bulk samples as opposed to many fine granules is also discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
