Abstract
X-ray diffraction (XRD) and Rutherford backscattering analysis (RBS) have been used independently to study the interface reaction of copperaluminum thin film couples during in-situ annealing in the temperature range 157°–220°C. For the X-ray studies a high vacuum annealing system was constructed on a Huber-Guinier thin film goniometer base1. This system enabled us to monitor the thin film interface reaction via changes of integrated X-ray intensities during the annealing treatment. RBS analysis was carried out with an existing in-situ heating stage. Using both techniques isothermal annealing experiments were carried out for four different temperatures. For this study 900Å Cu/1600Å Al and 1800Å Cu/3200Å Al thin film couples were prepared by sequential evaporation onto water cooled oxidized <111> silicon and MgO substrates.
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