Abstract
The kinetics of oxygen incorporation are of fundamental importance for an application of acceptor doped strontium titanate as a resistive-type oxygen sensor. The electrical conductance of the sample depends on the ambient oxygen partial pressure pO2 due to oxygen exchange between gas phase and solid state which leads to a flow of charge carriers. The kinetics of the incorporation process can be separated into two steps: the oxygen surface transfer and the subsequent bulk diffusion of oxygen vacancies. The rate of the slower step determines the kinetics of the overall incorporation process and thus the sensor’s response behavior.
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