Kinetics of low energy electron attachment to some chlorosilanes in the gas phase

Abstract

The rate coefficients (k’s) and the activation energies (Ea’s) of thermal electron attachment for SiCH3Cl3, SiH(CH3)2Cl, SiHCH3Cl2 and Si(C2H5)3Cl have been measured. The electron attachment processes in the chlorosilane-carbon dioxide mixtures have been investigated using a Pulsed Townsend technique in the temperature range 298 K-378 K. The increase of the rate coefficients with temperature follows the Arrhenius law and the Ea’s have been obtained from the slope of the ln(k) vs. T−1. The rate coefficients at 298 K are equal to 8.72 × 10−11cm3s−1, 6.72 × 10−11cm3s−1, 16.8 × 10−11cm3s−1 and 3.27 × 10−11cm3s−1 and activation energies are: 0.32 eV, 0.24 eV, 0.25 eV and 0.21 eV, respectively for SiCH3Cl3, SiH(CH3)2Cl, SiHCH3Cl2 and Si(C2H5)3Cl.