Abstract
The rate coefficients (k’s) and the activation energies (Ea’s) of thermal electron attachment for SiCH3Cl3, SiH(CH3)2Cl, SiHCH3Cl2 and Si(C2H5)3Cl have been measured. The electron attachment processes in the chlorosilane-carbon dioxide mixtures have been investigated using a Pulsed Townsend technique in the temperature range 298 K-378 K. The increase of the rate coefficients with temperature follows the Arrhenius law and the Ea’s have been obtained from the slope of the ln(k) vs. T−1. The rate coefficients at 298 K are equal to 8.72 × 10−11cm3s−1, 6.72 × 10−11cm3s−1, 16.8 × 10−11cm3s−1 and 3.27 × 10−11cm3s−1 and activation energies are: 0.32 eV, 0.24 eV, 0.25 eV and 0.21 eV, respectively for SiCH3Cl3, SiH(CH3)2Cl, SiHCH3Cl2 and Si(C2H5)3Cl.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have