Abstract
The Stutzmann, Jackson, and Tsai model [Phys. Rev. B 32, 23 (1985)] for the creation of metastable defects in illuminated a-Si:H by tail-to-tail recombination of electrons and holes and conversion of weak bonding and antibonding orbitals into dangling bonds has been extended to include the exponential nature of tail states and saturation of dangling bond density. A first-order approximation of the general result gives a stretched exponential formula similar to that of Redfield and Bube [Appl. Phys. Lett. 54, 1037 (1989)] removing an apparent contradiction between the two models. The theory is also extended to include the thermal annealing process. This gives an apparent saturation of dangling bond density at a steady state equilibrium value Nm which tends to the actual saturation value Ns as the intensity of illumination is increased.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.