Abstract
ABSTRACTWe report the CPM defect density of a-Si:H material and the performance characteristics of pin solar cells during high-intensity light-soaking. In one group of experiments we compared the effects of soaking with monochromatic light from a Kr+ laser to white light from a Xe arc lamp. The effects are identical for the same electron-hole pair generation rate. In a second group of experiments we light-soaked at the two different temperatures of 50°C and 90°C. At 90°C the defect density saturates at a lower value than at 50°C, and correspondingly the cell performance parameters saturate at higher values.
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