Abstract
We propose the Constant Degradation Method as a new scheme to investigate the kinetics of light induced creation of defects in amorphous hydrogenated silicon. In this method the photoconductivity is explicitly kept constant by continuously adjusting the incident light intensity. The experimentally observed linear dependence of both the light intensity and the induced defect density on illumination time is shown to be a direct consequence of the creation of defects by bimolecular recombination of electron-hole pairs. This time dependence is at variance with the predictions of dispersive transport models for the defect creation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
