Kinetics of laser-induced Au pyrolytic deposition from the liquid phase

Abstract

Kinetics of Au pyrolytic deposition from organic solutions of triphenyl phosphine complexes induced by a copper-vapor laser beam is studied experimentally. Activation energies Ta and pre-exponential factors are determined for 7 different Au complexes. Measured Ta values range from 1800 K to 9400 K. The average temperature of the GaAs wafer is found to be 70° C for a laser beam power of 10 mW.