Abstract
Memory (lock-on) phenomena observed in semiconducting glasses of the AsTeGe system have been investigated by electrical, calorimetrical and X-ray methods. Some differences between the memory process observed in high-As glasses and that in low-As glasses have been shown, which include both the waiting time for the process and the growth behaviour of the conductive filament formed between the electrodes. A strong correlation between the waiting time and the crystallization rate has also been indicated for their dependences on both the composition of the glass and the temperature. Finally, the kinetics of growth of the conductive filament during the memory process has been discussed using a simplified model, based on the ionic behaviour of the constituent elements in switch-on plasma, which explains well the polarity dependence of the filament growth.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
