Kinetics of Etching of Dislocations in Ferroelectric Ammonium Hydrogen Tartrate Single Crystals

Abstract

AbstractFerroelectric crystals of Ammonium Hydrogen Tartrate (AHT) have been synthesised using the controlled reaction between NH4Cl and (CHOHCOOH)2 by diffusion process in silica gel medium. (010) cleavages of AHT crystals have been etched in 1.0 M and 1.5 M solutions of SrCl2 solution. The lateral and normal velocities of the growth of pits were measured at different temperatures. The time dependence of the growth of the pit dimensions is found to be linear, whereas the temperature dependence of the growth of pits is found to be exponential, viz. \documentclass{article}\pagestyle{empty}\begin{document}$ \[V = A\,\exp \left({\frac{E}{{kT}}} \right)\] $\end{document}. The dissolution parameters, e.g. the activation energies and the pre‐exponential factors for dissolution along the surface and along the dislocation lines have been computed. It is observed that the activation energy (E1) of dissolution along [001] direction is found to be greater than the activation energy (Eb) along [100] direction and the implications are discussed.