Abstract
The kinetics of etching and dissolution of cadmium oxalate trihydrate single crystals in selective etchants such as 1 M HCl, 1 M HNO3, 10% chromic acid, 4M NH4Cl, 4M CdCl2 and 4 M NH4Cl-1 M HCl solutions are studied. Contrary to a previous report on semiconductor etching, in the present investigation the activation energy of etching in solvents having a reaction-rate controlled mechanism of dissolution was lower than in those having a diffusion-rate controlled dissolution mechanism. Three 3-component etch systems, i.e., HCl-NH4Cl-H2O, HCl-CdCl2-H2O, and NH4Cl-CdCl2-H2O, are employed and constant etch rate contours are plotted which enable the part played by each component in association with the other components in the system to be understood.
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