Abstract
AbstractLow temperature growth of silicon from silane is required in devices such as germanium- silicon HBTs and multiple quantum well structures for infrared detectors. Understanding the silicon growth kinetics is an important step in developing a complete model for incorporation of other species such as germanium, boron, and phosphorus. In this paper, we show that a wide range of recent data can be well explained by a model which includes the effect of hydrogen carrier gas and is based on a simple two- step reaction sequence for silane decomposition. Gas phase reactions and gas phase transport limits appear unimportant at least up to 1 Torr total pressure.
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