Abstract
A diffusive capture reaction of dopant atoms by relevant host atoms, via the Rideal–Eley mechanism, in GaAs grown by organometallic vapor-phase epitaxy is shown to result in the dopant concentration in the crystal acquiring a dependence on p Ga (which is proportional to the growth rate) in agreement with data on S As , Zn Ga , and Si Ga where p Ga is the partial pressure of trimethylgallium in the input gas stream.
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