Abstract
Nucleation and growth kinetics of dimer-adatom--stacking-fault (DAS) structures on laser-quenched Si(111) surfaces have been investigated by measuring the time evolution of DAS domain size distribution at $320--440\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$ with a scanning tunneling microscope (STM). The time evolution of the distribution suggests two different kinetics of DAS reconstruction. At a very early stage (immediately after laser irradiation), the surface contains many voids and formation of DAS structures is quite rapid. In the next stage (after the disappearance of the voids), the DAS domains develop at constant nucleation and growth rates in a measurable time scale. The temperature dependence of nucleation and growth rates is discussed based on a typical theory of the two-dimensional structural phase transition.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
