Abstract
Abstract The change of the potential barrier height δω at the boundary of the matrix and defect clusters introduced by the high-energy particle irradiation in the course of isothermal annealing is analyzed. It is found, that δω is independent of the matrix doping level and is determined by the energy position of defect levels in the core and their concentrations only. The relations describing the change in δω during isothermal annealing of the defects in the core for the first- and the second-order reactions are obtained, allowing to determine the initial height of the potential barrier, the order of the reaction and the defect annealing activation energy in the core. On the basis of the results obtained the annealing of the defect clusters in GaAs has been analyzed.
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